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WED416S8030A10SI Datasheet(PDF) 2 Page - White Electronic Designs Corporation |
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WED416S8030A10SI Datasheet(HTML) 2 Page - White Electronic Designs Corporation |
2 / 12 page WED416S8030A-SI 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs October 2004 Rev. 4 White Electronic Designs Corp. reserves the right to change products or specifications without notice. Symbol Type Signal Polarity Function CK Input Pulse Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock. CKE Input Level Active High Activates the CK signal when high and deactivates the CK signal when low. By deactivating the clock, CKE low initiates the Power Down mode, Suspend mode, or the Self Refresh mode. CE# Input Pulse Active Low CE# disable or enable device operation by masking or enabling all inputs except CK, CKE and DQM. RAS#, CAS#, WE# Input Pulse Active Low When sampled at the positive rising edge of the clock, CAS#, RAS#, and WE# define the operation to be WE executed by the SDRAM. BA0, BA1 Input Level - Selects which SDRAM bank is to be active. A0-11, A10/AP Input Level - During a Bank Activate command cycle, A0-11 defines the row address (RA0-11) when sampled at the rising clock edge. During a Read or Write command cycle, A0-8 defines the column address (CA0-8) when sampled at the rising clock edge. In addition to the row address, A10/AP is used to invoke Autoprecharge operation at the end of the Burst Read or Write cycle. If A10/AP is high, autoprecharge is selected and BA0, BA1 defines the bank to be precharged . If A10/AP is low, autoprecharge is disabled. During a Precharge command cycle, A10/AP is used in conjunction with BA0, BA1 to control which bank(s) to precharge. If A10/AP is high, all banks will be precharged regardless of the state of BA0, BA1. If A10/AP is low, then BA0, BA1 is used to define which bank to precharge. DQ0-15 Input/Output Level - Data Input/Output are multiplexed on the same pins. L(U)DQM Input Pulse Mask Active High The Data Input/Output mask places the DQ buffers in a high impedance state when sampled high. In Read mode, DQM has a latency of two clock cycles and controls the output buffers like an output enable. In Write mode, DQM has a latency of zero and operates as a word mask by allowing input data to be written if it is low but blocks the Write operation if DQM is high. VCC, VSS Supply Power and ground for the input buffers and the core logic. VCCQ, VSSQ Supply Isolated power and ground for the output buffers to improve noise immunity. INPUT/OUTPUT FUNCTIONAL DESCRIPTION |
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