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WED416S8030A10SI Datasheet(PDF) 2 Page - White Electronic Designs Corporation

Part # WED416S8030A10SI
Description  2Mx16x 4 Banks Synchronous DRAM
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WED416S8030A10SI Datasheet(HTML) 2 Page - White Electronic Designs Corporation

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WED416S8030A-SI
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
October 2004
Rev. 4
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Symbol
Type
Signal
Polarity
Function
CK
Input
Pulse
Positive Edge
The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock.
CKE
Input
Level
Active High
Activates the CK signal when high and deactivates the CK signal when low. By deactivating
the clock, CKE low initiates the Power Down mode, Suspend mode, or the Self Refresh mode.
CE#
Input
Pulse
Active Low
CE# disable or enable device operation by masking or enabling all inputs except CK, CKE
and DQM.
RAS#,
CAS#, WE#
Input
Pulse
Active Low
When sampled at the positive rising edge of the clock, CAS#, RAS#, and WE# define the
operation to be WE executed by the SDRAM.
BA0, BA1
Input
Level
-
Selects which SDRAM bank is to be active.
A0-11,
A10/AP
Input
Level
-
During a Bank Activate command cycle, A0-11 defines the row address (RA0-11) when
sampled at the rising clock edge.
During a Read or Write command cycle, A0-8 defines the column address (CA0-8) when
sampled at the rising clock edge. In addition to the row address, A10/AP is used to invoke
Autoprecharge operation at the end of the Burst Read or Write cycle. If A10/AP is high,
autoprecharge is selected and BA0, BA1 defines the bank to be precharged . If A10/AP is low,
autoprecharge is disabled. During a Precharge command cycle, A10/AP is used in conjunction
with BA0, BA1 to control which bank(s) to precharge. If A10/AP is high, all banks will be
precharged regardless of the state of BA0, BA1. If A10/AP is low, then BA0, BA1 is used to
define which bank to precharge.
DQ0-15
Input/Output
Level
-
Data Input/Output are multiplexed on the same pins.
L(U)DQM
Input
Pulse
Mask Active High
The Data Input/Output mask places the DQ buffers in a high impedance state when sampled
high. In Read mode, DQM has a latency of two clock cycles and controls the output buffers
like an output enable. In Write mode, DQM has a latency of zero and operates as a word
mask by allowing input data to be written if it is low but blocks the Write operation if DQM is
high.
VCC, VSS
Supply
Power and ground for the input buffers and the core logic.
VCCQ, VSSQ
Supply
Isolated power and ground for the output buffers to improve noise immunity.
INPUT/OUTPUT FUNCTIONAL DESCRIPTION


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