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WEDPN8M72V-100B2I Datasheet(PDF) 7 Page - White Electronic Designs Corporation

Part # WEDPN8M72V-100B2I
Description  8Mx72 Synchronous DRAM
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WEDPN8M72V-100B2I Datasheet(HTML) 7 Page - White Electronic Designs Corporation

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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WEDPN8M72V-XB2X
White Electronic Designs
January 2005
Rev. 4
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
TRUTH TABLE — COMMANDS AND DQM OPERATION1
NAME (FUNCTION)
CS#
RAS#
CAS#
WE#
DQM
ADDR
I/Os
COMMAND INHIBIT (NOP)
H
X
X
X
X
X
X
NO OPERATION (NOP)
L
H
H
H
X
X
X
ACTIVE (Select bank and activate row) ( 3)
L
L
H
H
X
Bank/Row
X
READ (Select bank and column, and start READ burst) (4)
L
H
L
H
L/H 8
Bank/Col
X
WRITE (Select bank and column, and start WRITE burst) (4)
L
H
L
L
L/H 8
Bank/Col
Valid
BURST TERMINATE
L
H
H
L
X
X
Active
PRECHARGE (Deactivate row in bank or banks) ( 5)
L
L
H
L
X
Code
X
AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6, 7)
L
L
L
H
X
X
X
LOAD MODE REGISTER (2)
L
L
L
L
X
Op-Code
X
Write Enable/Output Enable (8)
––––
L
Active
Write Inhibit/Output High-Z (8)
––––
H
High-Z
NOTES:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-11 define the op-code written to the Mode Register.
3. A0-11 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-8 provide column address; A10 HIGH enables the auto precharge feature
(nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1
determine which bank is being read from or written to.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks
precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care”
except for CKE.
8. Activates or deactivates the I/Os during WRITEs (zero-clock delay) and READs (two-
clock delay).
COMMANDS
The Truth Table provides a quick reference of available
commands. This is followed by a written description of each
command. Three additional Truth Tables appear following
the Operation section; these tables provide current state/
next state information.
COMMAND INHIBIT
The COMMAND INHIBIT function prevents new commands
from being executed by the SDRAM, regardless of whether the
CLK signal is enabled. The SDRAM is effectively deselected.
Operations already in progress are not affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to perform
a NOP to an SDRAM which is selected (CS# is LOW).
This prevents unwanted commands from being registered
during idle or wait states. Operations already in progress
are not affected.
LOAD MODE REGISTER
The Mode Register is loaded via inputs A0-11. See Mode
Register heading in the Register Definition section. The
LOAD MODE REGISTER command can only be issued
when all banks are idle, and a subsequent executable
command cannot be issued until tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a row in
a particular bank for a subsequent access. The value on the
BA0, BA1 inputs selects the bank, and the address provided
on inputs A0-11 selects the row. This row remains active
(or open) for accesses until a PRECHARGE command is
issued to that bank. A PRECHARGE command must be
issued before opening a different row in the same bank.
READ
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-8
selects the starting column location. The value on input
A10 determines whether or not AUTO PRECHARGE is
used. If AUTO PRECHARGE is selected, the row being
accessed will be precharged at the end of the READ burst;
if AUTO PRECHARGE is not selected, the row will remain
open for subsequent accesses. Read data appears on
the I/Os subject to the logic level on the DQM inputs two
clocks earlier. If a given DQM signal was registered HIGH,
the corresponding I/Os will be High-Z two clocks later; if
the DQM signal was registered LOW, the I/Os will provide
valid data.


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