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WMF2M8-120LC5 Datasheet(PDF) 4 Page - White Electronic Designs Corporation

Part # WMF2M8-120LC5
Description  2Mx8 MONOLITHIC FLASH, SMD 5962-97609
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WMF2M8-120LC5 Datasheet(HTML) 4 Page - White Electronic Designs Corporation

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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
WMF2M8-XXX5
May 2004
Rev. 6
Current Source
Current Source
D.U.T.
Ceff = 50 pf
IOL
IOL
VZ = 1.5V
(Bipolar Supply)
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
VCC = 5.0V, VSS = 0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
AC Test Conditions
FIGURE 2 – AC TEST CIRCUIT
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Write Enable Setup Time
tWLEL
tWS
000
ns
Chip Select Pulse Width
tELEH
tCP
45
50
50
ns
Address Setup Time
tAVEL
tAS
000
ns
Data Setup Time
tDVEH
tDS
45
50
50
ns
Data Hold Time
tEHDX
tDH
000
ns
Address Hold Time
tELAX
tAH
45
50
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
20
20
ns
Duration of Byte Programming Operation (1)
tWHWH1
300
300
300
µs
Sector Erase Time (2)
tWHWH2
15
15
15
sec
Read Recovery Time
tGHEL
000
µs
Chip Programming Time
44
44
44
sec
Chip Erase Time (3)
256
256
256
sec
Output Enable Hold Time (4)
tOEH
10
10
10
ns
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
HARDWARE RESET (RESET#)
Parameter
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET Pin Low (During Embedded Algorithms) to Read or Write (See Note)
Max
20
µs
tREADY
RESET Pin Low (Not During Embedded Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET Pulse Width
Min
500
ns
tRH
RESET High Time Before Read (See Note)
Min
50
ns
tRB
RY/BY Recovery Time
Min
0
ns


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