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WV3EG265M72EFSU265D4NG Datasheet(PDF) 8 Page - White Electronic Designs Corporation |
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WV3EG265M72EFSU265D4NG Datasheet(HTML) 8 Page - White Electronic Designs Corporation |
8 / 11 page WV3EG265M72EFSU-D4 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs May 2006 Rev. 0 ADVANCED DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued) VCC = VCCQ = +2.5V ±0.2V AC CHARACTERISTICS 335 262 265 UNITS PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX Exit self regresh to read command tXSRD 200 200 200 tCK Refresh interval time tREFI 7.8 7.8 7.8 µs Output DQS vaild window tQH tHP-tQHS tHP-tQHS tHP-tQHS ns Clock half period tHP tCLmin or tCHmin tCLmin or tCHmin tCLmin or tCHmin ns Data hold skew factor tQHS 0.55 0.75 0.75 ns DQS write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 ns Active Read with auto precharge command tRAP 18 20 20 ns Auto precharge Write recovery + Precharge time tRAL tWR/tCK + tRP/tCK tWR/tCK + tRP/tCK tWR/tCK + tRP/tCK tCK * AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different. |
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