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WV3HG64M72AER-AD6 Datasheet(PDF) 4 Page - White Electronic Designs Corporation |
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WV3HG64M72AER-AD6 Datasheet(HTML) 4 Page - White Electronic Designs Corporation |
4 / 10 page WV3HG64M72AER-AD6 March 2005 Rev. 1 ADVANCED 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs RECOMMENDED DC OPERATING CONDITIONS All Voltages Referenced to VSS Parameter Symbol Rating Units Notes Min. Type Max. Supply Voltage VCC 1.7 1.8 1.9 V Supply Voltage for DLL VCCL 1.7 1.8 1.9 V 4 Supply Voltage for Output VCCQ 1.7 1.8 1.9 V 4 Input Reference Voltage VREF 0.49*VCCQ 0.50*VCCQ 0.51*VCCQ V 1, 2 Termination Voltage VTT VREF-0.04 VREF VREF+0.04 V 3 There is no specific device VCC supply voltage requirement for SSTL-1.8 compliance. However under all conditions VCCQ must be less than or equal to VCC. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF isexpected to be about 0.5 x VCCQ of the transmitting device and VREF is expected to track variations in VCCQ. 2. Peak to peak AC noise on VREF may not exceed ±2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VCC, VCCQ and VCCDL tied together. ABSOLUTE MAXIMUM RATINGS SSTL_1.8V Symbol Parameter Rating Units Notes VCC Voltage on VCC pin relative to VSS - 1.0 V - 2.3 V V 5 VCCQ Voltage on VCCQ pin relative to VSS - 0.5 V - 2.3 V V 5 VCCL Voltage on VCCL pin relative to VSS - 0.5 V - 2.3 V V 5 VIN, VOUT Voltage on any pin relative to VSS - 0.5 V - 2.3 V V 5 TSTG Storage Temperature -55 to +100 C 5, 6 5. Stresses greater than those listed under ìAbsolute Maximum Ratingsî may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. CAPACITANCE TA = 25°C, f = 1MHz, VCC = VCCQ = 1.8V Parameter Symbol Max Units Input Capacitance: CK, CK# CCK 11 pF Input Capacitance: CKE, CS# CI1 12 pF Input Capacitance: Addr. RAS#, CAS#, WE# CI2 12 pF Input/Output Capacitance: DQ, DQS, DM, DQS# CIO 10 pF |
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