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WV3EG265M72EFSU335D4M Datasheet(PDF) 6 Page - White Electronic Designs Corporation |
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WV3EG265M72EFSU335D4M Datasheet(HTML) 6 Page - White Electronic Designs Corporation |
6 / 11 page WV3EG265M72EFSU-D4 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs May 2006 Rev. 0 ADVANCED ICC SPECIFICATIONS AND CONDITIONS VCC, VCCQ = +2.5V ±0.2V SYM PARAMETER/CONDITION MAX UNITS DDR333 @CL=2.5 DDR266 @CL=2 DDR266 @CL=2.5 ICC0* OPERATING CURRENT: One device bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two clock cycles 1,270 1,180 1,180 mA ICC1* OPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock cycle 1,540 1,450 1,450 mA ICC2P** PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (LOW) 370 370 370 mA ICC2F** IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle; tCK = tCK (MIN); CKE = HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM 820 820 820 mA ICC3P** ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW 820 820 820 mA ICC3N** ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank active; tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 1,090 1,090 1,090 mA ICC4R* OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA 1,585 1,450 1,450 mA ICC4W* OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle 1,675 1,495 1,495 mA ICC5** AUTO REFRESH BURST CURRENT: tREFC = tRFC (MIN) 3,970 3,790 3,790 mA ICC6** SELF REFRESH CURRENT: CKE ≤ 0.2V 370 370 370 mA ICC7* OPERATING CURRENT: Four device bank interleaving READs (Burst = 4) with auto precharge, tRC = minimum tRC allowed; tCK = tCK (MIN); Address and control inputs change only during Active READ, or WRITE commands 3,565 3,250 3,250 mA Note: ICC specification is based on SAMSUNG components. Other DRAM Manufacturers specification may be different. *: Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P (CKE LOW) mode. **: Value calculated reflects all module ranks in this operating condition. |
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