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WV3EG265M72EFSU262D4IM Datasheet(PDF) 6 Page - White Electronic Designs Corporation

Part # WV3EG265M72EFSU262D4IM
Description  1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WV3EG265M72EFSU262D4IM Datasheet(HTML) 6 Page - White Electronic Designs Corporation

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WV3EG265M72EFSU-D4
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
May 2006
Rev. 0
ADVANCED
ICC SPECIFICATIONS AND CONDITIONS
VCC, VCCQ = +2.5V ±0.2V
SYM
PARAMETER/CONDITION
MAX
UNITS
DDR333
@CL=2.5
DDR266
@CL=2
DDR266
@CL=2.5
ICC0*
OPERATING CURRENT: One device bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN);
DQ, DM and DQS inputs changing once per clock cycle; Address and control inputs changing
once every two clock cycles
1,270
1,180
1,180
mA
ICC1*
OPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4; tRC = tRC (MIN);
tCK = tCK (MIN); IOUT = 0mA; Address and control inputs changing once per clock cycle
1,540
1,450
1,450
mA
ICC2P**
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-down
mode; tCK = tCK (MIN); CKE = (LOW)
370
370
370
mA
ICC2F**
IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle; tCK = tCK (MIN); CKE =
HIGH; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ,
DQS, and DM
820
820
820
mA
ICC3P**
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-down mode;
tCK = tCK (MIN); CKE = LOW
820
820
820
mA
ICC3N**
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank active; tRC = tRAS
(MAX); tCK = tCK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
1,090
1,090
1,090
mA
ICC4R*
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA
1,585
1,450
1,450
mA
ICC4W*
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS
inputs changing twice per clock cycle
1,675
1,495
1,495
mA
ICC5**
AUTO REFRESH BURST CURRENT:
tREFC = tRFC (MIN)
3,970
3,790
3,790
mA
ICC6**
SELF REFRESH CURRENT: CKE ≤ 0.2V
370
370
370
mA
ICC7*
OPERATING CURRENT: Four device bank interleaving READs (Burst = 4) with auto
precharge, tRC = minimum tRC allowed; tCK = tCK (MIN); Address and control inputs change only
during Active READ, or WRITE commands
3,565
3,250
3,250
mA
Note: ICC specification is based on SAMSUNG components. Other DRAM Manufacturers specification may be different.
*: Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P (CKE LOW) mode.
**: Value calculated reflects all module ranks in this operating condition.


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