WV3EG265M72EFSU-D4

8

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

May 2006

Rev. 0

ADVANCED

DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED

AC OPERATING CONDITIONS (Continued)

AC CHARACTERISTICS

335

262

265

UNITS

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

MIN

MAX

Exit self regresh to read command

200

200

200

Refresh interval time

7.8

7.8

7.8

µs

Output DQS vaild window

ns

Clock half period

ns

Data hold skew factor

0.55

0.75

0.75

ns

DQS write postamble

0.4

0.6

0.4

0.6

0.4

0.6

ns

Active Read with auto precharge command

18

20

20

ns

Auto precharge Write recovery + Precharge time

* AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different.