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WV3HG128M72EER665D7IMG Datasheet(PDF) 6 Page - White Electronic Designs Corporation |
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WV3HG128M72EER665D7IMG Datasheet(HTML) 6 Page - White Electronic Designs Corporation |
6 / 11 page WV3HG128M72EER-D7 May 2006 Rev. 0 ADVANCED 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DDR2 ICC SPECIFICATIONS AND CONDITIONS VCC = +1.8V ± 0.1V Symbol Parameter Condition 806 665 534 403 Unit ICC0* Operating one bank active- precharge; tCK = tCK(I CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,210 1,165 1,120 mA ICC1* Operating one bank active- read- precharge; IOUT = 0mA; BL = 4; CL = CL(ICC); tCK = tCK(I CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING; Data pattern is same as ICC4W. TBD 1,300 1,255 1,210 mA ICC2P** Precharge power- down current; All banks idle; tCK = tCK(I CC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD 508 508 508 mA ICC2Q** Precharge quite standby current; All banks idle; tCK = tCK(I CC); CKE is HIGH; CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING TBD 760 715 715 mA ICC2N** Precharge standby current; All banks idle; tCK = tCK(I CC); CKE is HIGH; CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are SWITCHING TBD 805 760 760 mA ICC3P** Active power- down current; All banks open; tCK = tCK(I CC), CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0 TBD 670 625 625 mA Slow PDN Exit MRS(12) = 1 TBD 508 508 508 mA ICC3N** Active standby current; All banks open; tCK = tCK(I CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 850 805 805 mA ICC4W* Operating burst write current; All banks open; Continuous burst writes; BL = 4; CL = CL(ICC); AL = 0; tCK = tCK(I CC); tRC = tRC(I CC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 1,795 1,570 1,435 mA ICC4R* Operating burst read current; All banks open; Continuous burst reads; TOUT = 0mA; BL = 4; CL = CL(ICC); AL = 0; tCK = tCK(I CC); tRC = tRC(ICC); tRAS = tRAS MIN(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as ICC4W. TBD 1,795 1,570 1,435 mA ICC5** Burst auto refresh current; tCK = tCK(I CC); Refresh command at every tRC(ICC) interval; CKE is HIGH; CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING TBD 2,380 2,335 2,290 mA ICC6** Self refresh current; CK and CK# at 0V; CKE < 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Normal TBD 90 90 90 mA ICC7* Operating bank interleave read current; All bank interleaving reads; IOUT = 0mA; BL = 4; CL = CL(ICC); AL = tRCD(I CC) - 1*tCK(ICC); tCK = tCK(I CC); tRC = tRC(ICC); tRRD = tRRD MIN(ICC) = 1*tCK(ICC); CKE is HIGH; CS# is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data bus inputs are SWITCHING TBD 3,100 2,920 2,740 mA Notes: ICC specification is based on SAMSUNG components. Other DRAM manufacturers specification may be different. * Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P ( CKE LOW) mode. ** Value calculated reflects all module ranks in this operating condition. |
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