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LA733P Datasheet(PDF) 1 Page - ON Semiconductor

Part No. LA733P
Description  Amplifier Transistors (PNP Silicon)
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 1
1
Publication Order Number:
LA733P/D
LA733P, LA733Q
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
–48
Vdc
Collector-Base Voltage
VCBO
–60
Vdc
Emitter-Base Voltage
VEBO
–5.0
Vdc
Collector Current – Continuous
IC
–100
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
Device
Package
Shipping
ORDERING INFORMATION
LA733P
TO–92
http://onsemi.com
TO–92
CASE 29
STYLE 14
5000 Units/Box
3
2
1
LA733Q
TO–92
5000 Units/Box
COLLECTOR
2
3
BASE
1
EMITTER
LA733x = Specific Device Code
x
= P or Q
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
LA
733x
YWW




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