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LA733P Datasheet(PDF) 2 Page - ON Semiconductor

Part No. LA733P
Description  Amplifier Transistors (PNP Silicon)
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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LA733P, LA733Q
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–48
–
–
Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
–
–
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
–
–
Vdc
Collector–Base Leakage Current
(VCB = –60 V)
ICBO
–
–
–100
nAdc
Emitter–Base Leakage Current
(VEB = –5.0 V, IC = 0)
IEBO
–
–
–100
nAdc
Collector–Emitter Leakage Current
(VCE = –50 V)
ICEO
–
–
–1.0
mA
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –6.0 Vdc)
LA733P
LA733Q
hFE
200
135
–
–
400
270
–
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
–
–
–0.3
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VBE(sat)
–
–
–0.9
Vdc
Base–Emitter On Voltage
(IC = –1.0 mAdc, VCE = –6.0 Vdc)
VBE(on)
–0.55
–
–0.68
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mAdc, VCE = –6.0 Vdc, f = 20 MHz)
fT
100
–
450
MHz
Common–Base Output Capacitance
(VCB = –60 Vdc, IC = 0, f = 1.0 MHz)
Cob
–
–
7.0
pF
Noise Figure
(IC = –0.3 mAdc, VCE = –6.0 Vdc,
RG = 10 kW, f = 100 mHz)
NF
–
–
18
dB




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