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V6301 Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA

Part # V6301
Description  Ultra Low Power 3-Pin Power-On Reset IC
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Manufacturer  EMMICRO [EM Microelectronic - MARIN SA]
Direct Link  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

V6301 Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA

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R
V6300
V6301
Copyright © 2006, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Voltage at VDD to VSS
VDD
-0.3V to +10V
Minimum voltage at RES or
RES
Vmin
VSS – 0.3V
Maximum voltage at RES or
RES
Vmax
VDD + 0.3V
Storage Temperature Range
TSTO
-65°C to +150°C
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability or
cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, it is advised that normal
precautions be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur
when all terminal voltages are kept within the voltage range.
Operating Conditions
Parameter
Symbol Min
Max
Unit
Operating Temperature
1)
TA
-40
+125
°C
Positive Supply Voltage
VDD
1
8
V
Table 2
1)The maximum operating temperature is confirmed by
sampling at initial device qualification.
Electrical Characteristics
TA = -40 to +85°C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Min @
25°C
Typ.
Max. @
25°C
Max.
Unit
Supply current
1)
IDD
VDD = 2V
3)
1.5
2.1
3.1
µA
IDD
VDD = 5V
3.0
3.9
5.7
µA
IDD
VDD = 8V
5.2
6.8
10.0
µA
Threshold voltage
VTH
Version: A,G,M
1.77
1.84
1.95
2.04
2.17
V
VTH
Version: B,H,N
2.09
2.18
2.32
2.41
2.55
V
VTH
Version: C,I,O
2.48
2.59
2.73
2.86
3.03
V
VTH
Version: D,J,P
3.11
3.23
3.42
3.59
3.80
V
VTH
Version: E,K,Q
3.55
3.70
3.88
4.08
4.32
V
VTH
Version: F,L,R
4.05
4.22
4.42
4.67
4.95
V
Threshold hysteresis
VHYS
25
mV
RES Output Low Level
VOL
VDD = 5V, IOL = 8mA
175
400
mV
VOL
VDD = 3V, IOL = 4mA
140
300
mV
VOL
VDD = 1V, IOL = 50µA
20
90
mV
RES Output High Level
VOH
VDD = 5V, IOH = -8mA
4.3
4.5
V
VOH
VDD = 3V, IOH = -4mA
2.3
2.6
V
VOH
VDD = 1V, IOH = -100µA
850
950
mV
Output leakage current
2)
ILEAK
VDD = 8V
0.05
1
µA
Table 3
1)
RES or RES open
2)
Only for Open drain versions
3)
Versions A, G and M are tested at VDD = 1.8V
Timing Characteristics
VDD = 5.0V, TA = -40 to +85°C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Power on reset time:
V6300
V6301
tPOR
V6300
V6301
25
140
50
290
75
560
ms
ms
Sensitivity
4)
tSEN
for VDD = 5V to 3V in 5µs
20
0.8 tR
µs
Reaction time
4)
tR
for VDD = 5V to 3V in 5µs
22
75
150
µs
Table 4
4)
Tested on versions with VTH higher than 3V


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