PBSS3540F datasheet(3/8 Pages) PHILIPS

Part #	PBSS3540F

Description	40 V low VCEsat PNP transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

2001 Jul 13

3

Philips Semiconductors

Product speciﬁcation

40 V low VCEsat PNP transistor

PBSS3540F

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 ms; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −40 V; IE =0

−−−100

nA

VCB = −40 V; IE = 0; Tj = 150 °C

−−−50

µA

IBEO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−100

nA

hFE

DC current gain

VCE = −2V

IC = −10 mA

200

−−

IC = −100 mA; note 1

150

−−

IC = −500 mA; note 1

40

−−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−−50

mV

IC = −100 mA; IB = −5mA

−−−130

mV

IC = −200 mA; IB = −10 mA

−−−200

mV

IC = −500 A; IB = −50 mA; note 1

−−−350

mV

RCEsat

equivalent on-resistance

IC = −500 mA; IB = −50 mA; note 1 −

440

<700

m

Ω

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −50 mA; note 1 −−−1.2

V

VBEon

base-emitter turn-on voltage

VCE = −2 V; IC = −100 mA; note 1

−−−1.1

V

Cc

collector capacitance

VCB = −10 V; IE =Ie = 0; f = 1 MHz

−−

10

pF

fT

transition frequency

IC = −100 mA; VCE = −5V;

f = 100 MHz

100

300

−

MHz

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