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BZD27C7V5P Datasheet(PDF) 1 Page - Vaishali Semiconductor |
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BZD27C7V5P Datasheet(HTML) 1 Page - Vaishali Semiconductor |
1 / 7 page BZD27C3V6P to BZD27C200P Document Number 85810 Rev. 1.8, 13-Apr-05 Vishay Semiconductors www.vishay.com 1 17249 Zener Diodes with Surge Current Specification Features • Sillicon Planar Zener Diodes • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering: 260 °C/10 sec. at terminals • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: JEDEC DO-219AB (SMF®) Plastic case Weight: approx. 15 mg Packaging codes/options: GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( ≥ 40 µm thick) 2) T J = 25 °C prior to surge Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( ≥ 40 µm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation TL = 80 °C Ptot 2.3 W TA = 25 °C Ptot 0.81) W Non-repetitive peak pulse power dissipation 100 µs square pulse2) PZSM 300 W 10/1000 µs waveform (BZD27- C7V5P to BZD27-C100P)2) PRSM 150 W 10/1000 µs waveform (BZD27- C110P to BZD27-C200P)2) PRSM 100 W Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air1) RthJA 180 K/W Thermal resistance junction to lead RthJL 30 K/W Maximum junction temperature Tj 150 °C Storage temperature range TS - 55 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 0.2 A VF 1.2 V e3 |
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