BZD27C9V1P datasheet(1/7 Pages) VAISH

Part #	BZD27C9V1P

Description	Zener Diodes with Surge Current Specification

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Manufacturer	VAISH [Vaishali Semiconductor]

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BZD27C3V6P to BZD27C200P

Document Number 85810

Rev. 1.8, 13-Apr-05

Vishay Semiconductors

www.vishay.com

1

17249

Zener Diodes with Surge Current Specification

Features

• Sillicon Planar Zener Diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering:

260 °C/10 sec. at terminals

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Mechanical Data

Case: JEDEC DO-219AB (SMF®) Plastic case

Weight: approx. 15 mg

Packaging codes/options:

GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box

GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (

≥ 40 µm thick)

2) T

J = 25 °C prior to surge

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (

≥ 40 µm thick)

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Power dissipation

TL = 80 °C

Ptot

2.3

W

TA = 25 °C

Ptot

0.81)

W

Non-repetitive peak pulse power

dissipation

100

µs square pulse2)

PZSM

300

W

10/1000

µs waveform (BZD27-

C7V5P to BZD27-C100P)2)

PRSM

150

W

10/1000

µs waveform (BZD27-

C110P to BZD27-C200P)2)

PRSM

100

W

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air1)

RthJA

180

K/W

Thermal resistance junction to lead

RthJL

30

K/W

Maximum junction temperature

Tj

150

°C

Storage temperature range

TS

- 55 to + 150

°C

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 0.2 A

VF

1.2

V

e3

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