SENSITRON
SEMICONDUCTOR
Data Sheet 4858, Rev.-
• 221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MURC805-MURC860
Technical Data
MURC805-MURC860
Ultrafast Silicon Die
Applications:
• Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Glass-Passivated
•
Epitaxial Construction.
•
Low Reverse Leakage Current
•
High Surge Current Capability
•
Low Forward Voltage Drop
•
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
MURC
805
MURC
810
MURC
815
MURC
820
MURC
840
MURC
860
Unit
Peak Inverse Voltage
VRWM
50
100
150
200
400
600
V
Average Rectified Forward
Current Total Device,(Rated VR),
TC = 150°C
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Squre Wave,20KHz),
TC = 150°C
IFM
16
A
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
IFSM
100
A
Operating JunctionTemperature
and Storage Temperature
TJ, Tstg
-65 to +175
°C
Electrical Characteristics:
Characteristics
Symbol
MURC
805
MURC
810
MURC
815
MURC
820
MURC
840
MURC
860
Unit
Max. Forward Voltage Drop(Note1)
(IF = 8.0 Amp, TJ = 150 °C)
(IF = 8.0 Amp, TJ = 25 °C)
VF
0.895
0.975
1.00
1.30
1.20
1.50
V
Max. Reverse Current (Note1)
(Rated DC Voltage, TJ = 150 °C)
(Rated DC Voltage, TJ = 25 °C)
IR
250
5.0
500
10
µA
Max. Junction Capacitance
@VR = 5V, TC = 25 °C
fSIG = 1MHz, VSIG = 50mV (p-p)
CT
240
pF
Max Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/µs)
(IF = 0.5 Amp, IR = 1.0 A,
IREC=0.25A)
trr
35
25
60
50
nS
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%