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MWI 50-12 E6K
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Features
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
1200
V
V
GES
± 20
V
I
C25
T
C =
25°C
51
A
I
C80
T
C =
80°C
36
A
I
CM
V
GE = ±15 V; RG = 39 Ω; TVJ = 125°C
70
A
V
CEK
RBSOA; clamped inductive load; L = 100 µH
V
CES
t
SC
V
CE = 900 V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
10
µs
SCSOA; non-repetitive
P
tot
T
C = 25°C
210
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 35 A; VGE = 15 V; TVJ =
25°C
2.4
2.9
V
T
VJ = 125°C
2.8
V
V
GE(th)
I
C = 1 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES;
V
GE = 0 V;
T
VJ =
25°C
0.3
mA
T
VJ = 125°C
1.2
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
200
nA
t
d(on)
90
ns
t
r
50
ns
t
d(off)
440
ns
t
f
50
ns
E
on
5.4
mJ
E
off
2.6
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
2000
pF
Q
Gon
V
CE = 600 V; VGE = 15 V; IC = 35 A
150
nC
R
thJC
(per IGBT)
0.6 K/W
R
thCH
0.2
K/W
Inductive load, T
VJ = 125°C
V
CE = 600 V; IC = 35 A
V
GE =
±15 V; R
G = 39 Ω
I
C25
= 51 A
V
CES
= 1200 V
V
CE(sat) typ. = 2.4 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
9, 24
14
13
6
5
4
3
22
21
2
1
18
17
15, 16
11, 12
19, 20
8
7
NTC
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