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IRKT9204AS90 Datasheet(PDF) 3 Page - International Rectifier |
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IRKT9204AS90 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 10 page  IRK.71, .91 Series 3 Bulletin I27132 rev. H 10/02 www.irf.com I RRM Max. peak reverse and I DRM off-state leakage current at VRRM, VDRM 2500 (1 min) 50 Hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt Max. critical rate of rise T J = 125oC, linear to 0.67 V DRM , of off-state voltage (5) gate open circuit T J Junction operating temperature range T stg Storage temp. range - 40 to 125 R thJC Max. internal thermal resistance, junction 0.165 0.135 Per module, DC operation to case R thCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar 3 wt Approximate weight 110 (4) gr (oz) Case style TO-240AA JEDEC 15 mA T J = 125 oC, gate open circuit Thermal and Mechanical Specifications 500 V/ µs Parameters IRK.71 IRK.91 Units Conditions - 40 to 125 0.1 5 Triggering Blocking (5) Available with dv/dt = 1000V/ µs, to complete code add S90 i.e. IRKT91/16AS90. A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound K/W Nm Mounting surface flat, smooth and greased V INS RMS isolation voltage V P GM Max. peak gate power 12 12 P G(AV) Max. average gate power 3.0 3.0 I GM Max. peak gate current 3.0 3.0 A -V GM Max. peak negative gate voltage V GT Max. gate voltage 4.0 TJ = - 40°C required to trigger 2.5 TJ = 25°C 1.7 TJ = 125°C I GT Max. gate current 270 TJ = - 40°C required to trigger 150 mA TJ = 25°C 80 TJ = 125°C V GD Max. gate voltage T J = 125oC, that will not trigger rated V DRM applied I GD Max. gate current T J = 125oC, that will not trigger rated V DRM applied Parameters IRK.71 IRK.91 Units Conditions 0.25 V 6mA W V 10 Anode supply = 6V resistive load Anode supply = 6V resistive load °C Parameters IRK.71 IRK.91 Units Conditions Sine half wave conduction Rect. wave conduction Devices Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18 IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) |
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