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2SC5777 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC5777 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SC5777 No.6991-1/4 Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC 3.0 W Tc=25 °C80 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA ICES VCE=1600V, RBE=0 1.0 mA Emitter Cutoff Current IEBO VEB=4V, IC=0 40 200 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN6991A Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications 2SC5777 Package Dimensions unit : mm 2174A [2SC5777] 52003 TS IM TA-100442 / 62001 TS IM TA-3323 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH 16.0 3.4 2.0 2.8 2.1 5.45 5.45 0.7 0.9 5.6 3.1 12 3 |
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