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M29W400DT55ZE1F Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W400DT55ZE1F Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 38 page 1/38 June 2004 M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE –VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks ■ PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ■ ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend ■ UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming ■ TEMPORARY BLOCK UNPROTECTION MODE ■ LOW POWER CONSUMPTION – Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W400DT: 00EEh – Bottom Device Code M29W400D: 00EFh ■ PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions Figure 1. Packages TFBGA48 (ZA) 6 x 9mm FBGA SO44 (M) TFBGA48 (ZE) 6 x 8mm TSOP48 (N) 12 x 20mm FBGA |
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