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BC847M Datasheet(PDF) 4 Page - NXP Semiconductors |
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BC847M Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 2004 Mar 10 4 Philips Semiconductors Product specification NPN general purpose transistors BC847M series CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = 30 V; IE =0 − 15 nA VCB = 30 V; IE = 0; Tj = 150 °C − 5 µA IEBO emitter-base cut-off current VEB =5V; IC =0 − 100 nA hFE DC current gain VCE =5V; IC =2mA BC847AM 110 220 BC847BM 200 450 BC847CM 420 800 VBE base-emitter voltage IC = 2 mA; VCE = 5 V 580 700 mV IC = 10 mA; VCE =5V − 770 mV VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 200 mV IC = 100 mA; IB = 5 mA; note 1 − 400 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 1.5 pF fT transition frequency VCE =5V; IC =10mA; f = 100 MHz 100 − MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz − 10 dB |
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