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BC847AW Datasheet(PDF) 6 Page - NXP Semiconductors |
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BC847AW Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 8 — 20 August 2012 6 of 18 NXP Semiconductors BC847 series 45 V, 100 mA NPN general-purpose transistors VCE =5V (1) Tamb = 150 C (2) Tamb =25 C (3) Tamb = 55 C VCE =5V (1) Tamb = 55 C (2) Tamb =25 C (3) Tamb = 150 C Fig 1. Group A: DC current gain as a function of collector current; typical values Fig 2. Group A: Base-emitter voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 150 C (2) Tamb =25 C (3) Tamb = 55 C IC/IB =10 (1) Tamb = 55 C (2) Tamb =25 C (3) Tamb = 150 C Fig 3. Group A: Collector-emitter saturation voltage as a function of collector current; typical values Fig 4. Group A: Base-emitter saturation voltage as a function of collector current; typical values mgt723 10−1 110 102 103 IC (mA) 0 400 300 200 100 hFE (1) (2) (3) mgt724 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBE (mV) (1) (2) (3) 103 102 10 mgt725 10−1 110 102 103 IC (mA) VCEsat (mV) (1) (2) (3) mgt726 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) |
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