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CDSOT23-T12C Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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CDSOT23-T12C Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CDSOT23-T03~T36C – TVS Diode Array Series Features ■ Lead free as standard ■ RoHS compliant* ■ Protects 1 or 2 lines ■ Unidirectional & bidirectional configurations ■ ESD protection > 40 KV Applications ■ RS-232, RS-422 & RS-423 data lines ■ Portable electronics ■ Wireless bus protection ■ Control & monitoring systems General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection applications, in compact chip package SOT23 size format. The Transient Voltage Supressor Array series offers a choice of voltage types ranging from 3 V to 36 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. Parameter Symbol Value Unit Operating Temperature TJ -55 to +150 °C Storage Temperature TSTG -55 to +150 °C Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDSOT23-T03C. 3 1 2 3 1 2 Parameter Symbol CDSOT23- Unit Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C Breakdown Voltage @ 1 mA VBR 4.0 6.0 8.5 13.3 16.7 26.7 40.0 V Working Peak Voltage VWM 3.3 5.0 8.0 12.0 15.0 24.0 36.0 V Maximum Clamping Voltage VC @ IP1 VF 7.0 9.8 13.4 19.0 24.0 43.0 51.0 V Maximum Clamping Voltage @ 8/20 µs VC @ IPP1 VF 10.9 V @ 43 A 13.5 V @ 42 A 16.9 V @ 34 A 25.9 V @ 27 A 30.0 V @ 17 A 49.0 V @ 12 A 76.8 V @ 9 A V Maximum Leakage Current @ VWM ID 125 20 10 2 1 1 1 µA Maximum Cap Undirectional @ 0 V, 1 MHz Cj(SD) 500 350 250 150 100 88 80 pF Maximum Cap Bidirectional @ 0 V, 1 MHz Cj(SD) 300 210 150 90 60 63 60 pF Peak Pulse Power (tp = 8/20 µs)2 PPP 500 W Forward Voltage @ 100 mA, 300 µs – Square Wave3 VF 1.5 V |
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