NTD4805N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

2.25

°C/W

Junction−to−TAB (Drain)

3.5

Junction−to−Ambient − Steady State (Note 1)

67

Junction−to−Ambient − Steady State (Note 2)

111

1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

27

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

"100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature Coefficient

5.86

mV/

°C

Drain−to−Source On Resistance

11.5 V

4.3

5.0

m

W

4.2

6.0

7.4

5.8

Forward Transconductance

gFS

17

S

CHARGES AND CAPACITANCES

Input Capacitance

2865

pF

Output Capacitance

610

Reverse Transfer Capacitance

338

Total Gate Charge

20.5

26

nC

Threshold Gate Charge

4.05

Gate−to−Source Charge

8.28

Gate−to−Drain Charge

8.36

Total Gate Charge

48

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

18.3

ns

Rise Time

101.5

Turn−Off Delay Time

16.3

Fall Time

10.6

Turn−On Delay Time

8.1

ns

Rise Time

23.1

Turn−Off Delay Time

27.1

Fall Time

5.7

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.