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1SV257 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SV257 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 2 page TOSHIBA TOSHIBA CORPORATION 1/2 Discrete Semiconductors 1SV257 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Ω(Typ.) • Useful for Small Size Set Absolute Maximum Ratings (Ta = 25 °C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55 ~ 125 °C Electrical Characteristics (Ta = 25 °C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR = 1µA 15 ––V Reverse Current IR VR = 15V – – 3 nA Capacitance C2V VR = 2V, f = 1MHz 14 15 16 pF Capacitance C10V VR = 10V, f = 1MHz 5.5 6 6.5 pF Capacitance Ratio C2V/C10V – 2.0 2.5 – – Series Resistance rs VR = 5V, f = 470MHz – 0.2 0.4 Ω Marking Unit in mm |
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