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M29F040B45K6T Datasheet(PDF) 1 Page - STMicroelectronics |
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M29F040B45K6T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 21 page 1/21 April 2002 M29F040B 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45ns s PROGRAMMING TIME – 8 µs per Byte typical s 8 UNIFORM 64 Kbytes MEMORY BLOCKS s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E2h 32 1 TSOP32 (N) 8 x 20mm PLCC32 (K) PDIP32 (P) Figure 1. Logic Diagram AI02900 19 A0-A18 W DQ0-DQ7 VCC M29F040B G E VSS 8 |
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