MPSA29 datasheet(3/4 Pages) ONSEMI

Part #	MPSA29

Description	Darlington Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSA28 MPSA29

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3

Figure 1. DC Current Gain

Figure 2. “ON” Voltages

Figure 3. Temperature Coefficients

Figure 4. Collector Saturation Region

Figure 5. Active Region — Safe Operating

Area

Figure 6. High Frequency Current Gain

100

1 k

1.0

IC, COLLECTOR CURRENT (mA)

200

100

20

50

10

IC, COLLECTOR CURRENT (mA)

100

1 k

1.0

1.4

1.0

0.8

0.6

100

500

1.0

IC, COLLECTOR CURRENT (mA)

0

-1.0

-2.0

-3.0

-4.0

-5.0

IB, BASE CURRENT (mA)

1.0

0.2

2.4

2.0

1.6

1.2

0.8

0.4

2.0

200

2.0

10

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1 k

200

100

50

20

10

IC, COLLECTOR CURRENT (mA)

1.0

100

0.3

10

5.0

2.0

1.0

0.2

0.1

10

5.0

VCE = 5.0 V

5.0

2.0

1.0

10

2.0

5.0

20

50

200

500

TA = 125°C

TA = 25°C

TA = -55°C

200

500

2.0

5.0

10

20

50

1.2

1.6

1.8

TA = 25°C

VBE(S) @ IC/IB = 1.0 k

VCE(S) @ IC/IB = 1.0 k

VBE(ON) @ VCE = 5.0 V

2.0

5.0

10

20

50

10 20

100 200

1 k 1.5 k

TA = 25°C

20

100

50

500

0.5

2.0

5.0

200 300

20

50

0.5

VCE = 5.0 V

TA = 25°C

f = 100 MHz

IC = 10 mA

IC = 100 mA

IC = 250 mA

IC = 500 mA

1.0 ms

1.0 s

TA = 25°C

MPSA28

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPSA29

100 ms

TC = 25°C

25°C to 125°C

-55°C to 25°C

qVC for VCE(S)

qVB for VBE

VALID FOR DUTY CYCLE v 10%

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