NTD3055L170T4G datasheet(2/8 Pages) ONSEMI

Part #	NTD3055L170T4G

Description	9.0 Amps, 60 Volts, Logic Level, N?묬hannel DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD3055L170

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

53.6

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.7

4.2

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 4.5 Adc)

RDS(on)

−

153

170

m

W

Static Drain−to−Source On−Voltage (Note 3)

(VGS = 5.0 Vdc, ID = 9.0 Adc)

(VGS = 5.0 Vdc, ID = 4.5 Adc, TJ = 150°C)

VDS(on)

−

1.8

1.3

2.1

−

Vdc

Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc)

gFS

−

7.3

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

−

195

275

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

70

100

Transfer Capacitance

f = 1.0 MHz)

Crss

−

29

42

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

−

9.7

20

ns

Rise Time

(VDD = 30 Vdc, ID = 9.0 Adc,

VGS =50Vdc

tr

−

69

150

s

Turn−Off Delay Time

VGS = 5.0 Vdc,

RG = 9.1 W) (Note 3)

td(off)

−

10

20

Fall Time

RG = 9.1 W) (Note 3)

tf

−

38

80

Gate Charge

(V

48 Vdc I

9 0 Adc

QT

−

4.7

10

nC

GaeC a ge

(VDS = 48 Vdc, ID = 9.0 Adc,

VGS = 5.0 Vdc) (Note 3)

Q1

−

1.4

−

C

VGS = 5.0 Vdc) (Note 3)

Q2

−

2.9

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 9.0 Adc, VGS = 0 Vdc) (Note 3)

(IS = 9.0 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

0.98

0.85

1.25

−

Vdc

Reverse Recovery Time

(I

9 0 Adc V

0 Vdc

trr

−

29.8

−

ns

e e se

eco e y

e

(IS = 9.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

ta

−

17.6

−

s

dIS/dt = 100 A/ms) (Note 3)

tb

−

12.2

−

Reverse Recovery Stored Charge

QRR

−

0.031

−

mC

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device

Package

Shipping†

NTD3055L170

DPAK

75 Units/Rail

NTD3055L170G

DPAK

(Pb−Free)

75 Units/Rail

NTD3055L170−1

DPAK−3

75 Units/Rail

NTD3055L170−1G

DPAK−3

(Pb−Free)

75 Units/Rail

NTD3055L170T4

DPAK

2500 Tape & Reel

NTD3055L170T4G

DPAK

(Pb−Free)

2500 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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