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NTD3055L170T4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD3055L170T4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTD3055L170 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 − − 53.6 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 1.0 10 mAdc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.7 4.2 2.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 4.5 Adc) RDS(on) − 153 170 m W Static Drain−to−Source On−Voltage (Note 3) (VGS = 5.0 Vdc, ID = 9.0 Adc) (VGS = 5.0 Vdc, ID = 4.5 Adc, TJ = 150°C) VDS(on) − − 1.8 1.3 2.1 − Vdc Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc) gFS − 7.3 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc Ciss − 195 275 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 70 100 Transfer Capacitance f = 1.0 MHz) Crss − 29 42 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) − 9.7 20 ns Rise Time (VDD = 30 Vdc, ID = 9.0 Adc, VGS =50Vdc tr − 69 150 s Turn−Off Delay Time VGS = 5.0 Vdc, RG = 9.1 W) (Note 3) td(off) − 10 20 Fall Time RG = 9.1 W) (Note 3) tf − 38 80 Gate Charge (V 48 Vdc I 9 0 Adc QT − 4.7 10 nC GaeC a ge (VDS = 48 Vdc, ID = 9.0 Adc, VGS = 5.0 Vdc) (Note 3) Q1 − 1.4 − C VGS = 5.0 Vdc) (Note 3) Q2 − 2.9 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 9.0 Adc, VGS = 0 Vdc) (Note 3) (IS = 9.0 Adc, VGS = 0 Vdc, TJ = 150°C) VSD − − 0.98 0.85 1.25 − Vdc Reverse Recovery Time (I 9 0 Adc V 0 Vdc trr − 29.8 − ns e e se eco e y e (IS = 9.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) ta − 17.6 − s dIS/dt = 100 A/ms) (Note 3) tb − 12.2 − Reverse Recovery Stored Charge QRR − 0.031 − mC 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping† NTD3055L170 DPAK 75 Units/Rail NTD3055L170G DPAK (Pb−Free) 75 Units/Rail NTD3055L170−1 DPAK−3 75 Units/Rail NTD3055L170−1G DPAK−3 (Pb−Free) 75 Units/Rail NTD3055L170T4 DPAK 2500 Tape & Reel NTD3055L170T4G DPAK (Pb−Free) 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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