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CPH5831 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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CPH5831 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page CPH5831 No.8220-2/6 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS= ±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=1.5A 3.36 5.6 S RDS(on)1 ID=1.5A, VGS=4V 48 63 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=1A, VGS=2.5V 58 82 m Ω RDS(on)3 ID=0.5A, VGS=1.8V 72 110 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 280 pF Output Capacitance Coss VDS=10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr See specified Test Circuit. 35 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 35 ns Fall Time tf See specified Test Circuit. 25 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 nC Diode Forward Voltage VSD IS=3A, VGS=0 0.82 1.2 V [SBD] Reverse Voltage VR IR=1.5mA 15 V Forward Voltage VF1IF=0.5A 0.27 0.32 V VF2IF=1A 0.30 0.35 V Reverse Current IR VR=6V 600 µA Interterminal Capacitance C VR=10V, f=1MHz cycle 65 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 15 ns Thermal Resistance Rth(j-a) Mounted on a ceramic board (600mm2!0.8mm) 138 °C / W Package Dimensions Electrical Connection unit : mm 2171 54 3 12 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode Top view 2.9 0.05 0.4 0.95 0.15 0.4 12 3 4 5 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 |
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