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CPH5831 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # CPH5831
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

CPH5831 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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CPH5831
No.8220-2/6
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
µA
Gate-to-Source Leakage Current
IGSS
VGS= ±8V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1.5A
3.36
5.6
S
RDS(on)1
ID=1.5A, VGS=4V
48
63
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=1A, VGS=2.5V
58
82
m
RDS(on)3
ID=0.5A, VGS=1.8V
72
110
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
280
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
60
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
38
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
13
ns
Rise Time
tr
See specified Test Circuit.
35
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
35
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=3A
8.8
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=3A
0.85
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=3A
0.85
nC
Diode Forward Voltage
VSD
IS=3A, VGS=0
0.82
1.2
V
[SBD]
Reverse Voltage
VR
IR=1.5mA
15
V
Forward Voltage
VF1IF=0.5A
0.27
0.32
V
VF2IF=1A
0.30
0.35
V
Reverse Current
IR
VR=6V
600
µA
Interterminal Capacitance
C
VR=10V, f=1MHz cycle
65
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
15
ns
Thermal Resistance
Rth(j-a)
Mounted on a ceramic board (600mm2!0.8mm)
138
°C / W
Package Dimensions
Electrical Connection
unit : mm
2171
54
3
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
2.9
0.05
0.4
0.95
0.15
0.4
12
3
4
5
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5


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