HAL300SO-C datasheet(6/17 Pages) MICRONAS

Part #	HAL300SO-C

Description	Differential Hall Effect Sensor IC

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Manufacturer	MICRONAS [Micronas]

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HAL300

6

Micronas

Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

1

4.0

5.5

6.8

mA

TJ = 25 °C

IDD

Supply Current over

Temperature Range

1

2.5

5

7.5

mA

VDDZ

Overvoltage Protection

at Supply

1

–

28.5

32.5

V

IDD = 25 mA, TJ = 25 °C,

t = 20 ms

VOZ

Overvoltage Protection at Output

3

–

28

32.5

V

IOL = 25 mA, TJ = 25 °C,

t = 20 ms

VOL

Output Voltage

3

–

180

250

mV

VDD = 12 V, IO = 20 mA,

TJ = 25 °C

VOL

Output Voltage over

Temperature Range

3

–

180

400

mV

IO = 20 mA

IOH

Output Leakage Current

3

–

0.06

1

µA

VOH = 4.5 V... 24 V,

DB < DBOFF, TJ = 25 °C

IOH

Output Leakage Current over

Temperature Range

3

–

0.06

10

µA

VOH = 4.5 V... 24 V,

DB < DBOFF, TJ ≤ 150 °C

fosc

Internal Oscillator

Chopper Frequency

–

42

62

75

kHz

TJ = 25 °C

fosc

Internal Oscillator Chopper Fre-

quency over Temperature Range

–

36

62

78

kHz

ten(O)

Enable Time of Output

after Setting of VDD

3

–

35

–

µs

VDD = 12 V,

DB > DBON + 2mT or

DB < DBOFF – 2mT

tr

Output Rise Time

3

–

80

400

ns

VDD = 12 V, RL = 820 Ω,

CL = 20 pF

tf

Output Fall Time

3

–

45

400

ns

VDD = 12 V, RL = 820 Ω,

CL = 20 pF

RthJSB

case

SOT-89A

Thermal Resistance Junction to

Substrate Backside

–

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 7

RthJS

case

TO-92UA

Thermal Resistance

Junction to Soldering Point

–

150

200

K/W

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