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M5M51008DKR-55H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M5M51008DKR-55H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 8 page  MITSUBISHI LSIs M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM Ver. 1.1 MITSUBISHI ELECTRIC ABSOLUTE MAXIMUM RATINGS CAPACITANCE Symbol Parameter Test conditions pF pF Unit Max 10 Typ Min Limits Input capacitance Output capacitance CI CO Parameter Supply voltage Input voltage Output voltage Power dissipation Operating temperature Storage temperature Unit V V V mW °C °C Conditions With respect to GND Ta=25°C 700 0~70 – 65~150 Ratings Symbol Vcc VI VO Pd Topr Tstg DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted) Symbol Parameter V V V Max Typ Limits Min Test conditions Unit V µA – 0.3*~7 – 0.3*~Vcc + 0.3 (Ta=0~70°C, Vcc=5V±10% unless otherwise noted) 0~Vcc * –3.0V in case of AC ( Pulse width ≤ 50ns ) Note 1: Direction for current flowing into an IC is positive (no mark). 2: Typical value is Vcc = 5V, Ta = 25°C mA * –3.0V in case of AC ( Pulse width ≤ 50ns ) µA µA mA V Vcc + 0.3 0.8 2.2 – 0.3* 2.4 3 Stand-by current 0.4 ±1 Active supply current (AC, MOS level) Active supply current (AC, TTL level) Vcc – 0.5 ±1 80 VIH VIL VOH VOL II IO ICC1 ICC2 ICC3 ICC4 High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input current Output current in off-state Stand-by current IOH= –1.0mA IOH= –0.1mA IOL=2mA VI=0~Vcc S1=VIH or S2=VIL or OE=VIH VI/O=0~VCC S1=VIL,S2=VIH, other inputs=VIH or VIL Output-open(duty 100%) 1) S2 ≤ 0.2V, other inputs=0~VCC 2) S1 ≥ VCC–0.2V, S2 ≥ VCC–0.2V, other inputs=0~VCC S1=VIH or S2=VIL, other inputs=0~VCC ~25°C ~40°C ~70°C -H 2 6 20 mA 15 1MHz S1 ≤ 0.2V, S2 ≥ VCC–0.2V other inputs ≤ 0.2V or ≥ VCC–0.2V Output-open(duty 100%) 85 15 70ns 55ns 70 70 1MHz 70ns 55ns VO=GND,VO=25mVrms, f=1MHz FP,VP,RV,KV FP,VP,RV,KV VI=GND, VI=25mVrms, f=1MHz 8 3 4 5 34 37 39 42 |
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Similar Description - M5M51008DKR-55H |
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