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M5M417400CTP-5 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M5M417400CTP-5 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 22 page MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM 5 TIMING REQUIREMENTS (For Read, Write, Read-Modify-Write, Refresh, and Fast-Page Mode Cycles) (Ta = 0 ~ 70°C, VCC = 5V ± 10%, VSS = 0V, unless otherwise noted. See notes 12, 13) Note 12: The timing requirements are assumed tT = 5ns. 13: VIH(min) and VIL(max) are reference levels for measuring timing of input signals. 14: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is controlled exclusively by tCAC or tAA. tRCD(min) is specified as tRCD(min) = tRAH(min) + 2tH + tASC(min). 15: tRAD(max) is specified as a reference point only. If tRAD ≥ tRAD(max) and tASC ≤ tASC(max), access time is controlled exclusively by tAA. 16: tASC(max) is specified as a reference point only. If tRCD ≥ tRCD(max) and tASC ≥ tASC(max), access time is controlled exclusively by tCAC. 17: Either tDZC or tDZO must be satisfied. 18: Either tCDD or tODD must be satisfied. 19: tT is measured between VIH(min) and VIL(max). Read and Refresh Cycles Note 20: Either tRCH or tRRH must be satisfied for a read cycle. Symbol Parameter Limits Unit M5M417400C-5,-5S M5M417400C-6,-6S M5M417400C-7,-7S Min Max Min Max Min Max tREF Refresh cycle time 32 32 32 ms tRP RAS high pulse width 30 40 50 ns tRCD Delay time, RAS low to CAS low (Note 14) 183720452050 ns tCRP Delay time, CAS high to RAS low 101010 ns tRPC Delay time, RAS high to CAS low 000 ns tCPN CAS high pulse width 10 10 10 ns tRAD Column address delay time from RAS low (Note 15) 132515301535 ns tASR Row address setup time before RAS low 000 ns tASC Column address setup time before CAS low (Note 16) 0 10010010 ns tRAH Row address hold time after RAS low 8 10 10 ns tCAH Column address hold time after CAS low 131515 ns tDZC Delay time, data to CAS low (Note 17) 0 0 0 ns tDZO Delay time, data to OE low (Note 17) 0 0 0 ns tCDD Delay time, CAS high to data (Note 18) 13 15 15 ns tODD Delay time, OE high to data (Note 18) 13 15 15 ns tT Transition time (Note 19) 1 50 1 50 1 50 ns Symbol Parameter Limits Unit M5M417400C-5,-5S M5M417400C-6,-6S M5M417400C-7,-7S MinMax MinMax MinMax tRC Read cycle time 90 110 130 ns tRAS RAS low pulse width 50 10000 60 10000 70 10000 ns tCAS CAS low pulse width 13 10000 15 10000 20 10000 ns tCSH CAS hold time after RAS low 506070 ns tRSH RAS hold time after CAS low 131520 ns tRCS Read setup time after CAS high 0 0 0 ns tRCH Read hold time after CAS low (Note 20) 0 0 0 ns tRRH Read hold time after RAS low (Note 20) 10 10 10 ns tRAL Column address to RAS hold time 25 30 35 ns tOCH CAS hold time after OE low 131520 ns tORH RAS hold time after OE low 131520 ns |
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