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MAZ7075 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MAZ7075 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Zener Diodes 1 Publication date: November 2004 SKE00006DED MAZ7xxx Series (MA7xxx Series) Silicon planar type For stabilization of power supply ■ Features • Large power dissipation P D : 800 mW • Allowing to supply with the radial taping ■ Absolute Maximum Ratings T a = 25°C Unit: mm Parameter Symbol Rating Unit Repetitive peak forward current IFRM 200 mA Power dissipation * 1 PD 800 mW Non-repetitive reverse surge * 2 PZSM 60 W power dissipation Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C ■ Common Electrical Characteristics T a = 25°C ± 3°C *1 Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 1.0 V Zener voltage * 2 VZ IZ Specified value V Zener operating resistance RZ IZ Specified value Ω Reverse current IR VR Specified value µA Temperature coefficient of zener voltage * 3 SZ IZ Specified value mV/ °C Terminal capacitance Ct VR = 0 V, f = 1 MHz pF Specified value 1st Band 2nd Band 3rd Band Cathode Anode Colored band indicatesVZ classification 4.0±0.5 27 min. 2.6 +0.4 –0.2 27 min. DO-41-A2 Package Note) *1: PD = 800 mW achieved with a printed circuit board *2: t = 100 µs, T j = 150°C Refer to the list of the electrical characteristics within part numbers Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 5 MHz. 3. *1: The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C) *2: VZ guaranteed 20 ms after current flow. *3: Tj = 25°C to 150°C Note) The part number in the parenthesis shows conventional part number. |
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