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M5M467800TP-6S Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M5M467800TP-6S Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 37 page MITSUBISHI ELECTRIC Jun. 1999 FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM MITSUBISHI LSIs (Rev. 1.1) M5M467400/465400BJ,BTP -5,-6,-5S,-6S M5M467800/465800BJ,BTP -5,-6,-5S,-6S M5M465160BJ,BTP -5,-6,-5S,-6S 1 Standard 32 pin SOJ, 32 pin TSOP Standard 50 pin SOJ, 50 pin TSOP Single 3.3 0.3V supply Low stand-by power dissipation 1.8mW (Max) LVCMOS input level Low operating power dissipation M5M467400Bxx-5,5S / M5M467800Bxx-5,5S 360.0mW (Max) M5M467400Bxx-6,6S / M5M467800Bxx-6,6S 324.0mW (Max) M5M465400Bxx-5,5S / M5M465800Bxx-5,5S 468.0mW (Max) M5M465400Bxx-6,6S / M5M465800Bxx-6,6S 432.0mW (Max) M5M465160Bxx-5,5S 504.0mW (Max) M5M465160Bxx-6,6S 468.0mW (Max) Self refresh capability* Self refresh current 400µA (Max) Fast-page mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities Early-write mode and OE to control output buffer impedance All inputs, outputs LVTTL compatible and low capacitance :Applicable to self refresh version(M5M467400/465400/467800/465800/465160BJ,BTP-5S,-6S:option) only APPLICATION Main memory unit for computers, Microcomputer memory, Refresh memory for CRT DESCRIPTION The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation. The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. ± * ADDRESS M5M465400Bxx M5M467400Bxx Part No. XX=J,TP FEATURES Type name M5M467400BXX-5,5S M5M467800BXX-5,5S M5M467400BXX-6,6S M5M467800BXX-6,6S M5M465400BXX-5,5S M5M465800BXX-5,5S M5M465400BXX-6,6S M5M465800BXX-6,6S access time (max.ns) RAS access time (max.ns) CAS (max.ns) access time Address time (min.ns) Cycle dissipa- (typ.mW) Power tion 50 60 50 13 15 13 25 30 25 90 110 90 300 250 390 13 15 13 access time (max.ns) OE 60 15 30 110 325 15 Type name access time (max.ns) RAS access time (max.ns) CAS (max.ns) access time Address time (min.ns) Cycle access time (max.ns) OE M5M465160BXX-6,6S M5M465160BXX-5,5S 50 60 13 15 25 30 90 110 13 15 dissipa- (typ.mW) Power tion 420 390 (M5M467400Bxx/M5M465400Bxx/M5M467800Bxx/M5M465800Bxx) (M5M465160Bxx) M5M465800Bxx M5M467800Bxx M5M465160Bxx A0-A12 Row Add Col Add Refresh Refresh Cycle RAS Only Ref,Normal R/W CBR Ref,Hidden Ref RAS Only Ref,Normal R/W CBR Ref,Hidden Ref A0-A10 A0-A11 A0-A11 8192/64ms 4096/64ms 4096/64ms 8192/128ms 4096/128ms 4096/128ms Normal S-version A0-A12 RAS Only Ref,Normal R/W CBR Ref,Hidden Ref RAS Only Ref,Normal R/W CBR Ref,Hidden Ref A0-A9 A0-A11 A0-A10 8192/64ms 4096/64ms 4096/64ms 8192/128ms 4096/128ms 4096/128ms RAS Only Ref,Normal R/W CBR Ref,Hidden Ref A0-A11 A0-A9 4096/64ms 4096/128ms |
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