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M306N0MCT Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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M306N0MCT Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 262 page  4 Description Preliminary Specifications REV.B Specifications in this manual are tentative and subject to change. Mitsubishi microcomputers M16C / 6N Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Performance Outline Table 1-1 is a performance outline of the M16C/6N group. Table 1-1. Performance outline of M16C/6N group Item Performance Number of basic instructions 91 instructions Shortest instruction execution time 62.5 ns (f(XIN) = 16MHz, 1/1 prescaler, without software wait) 100ns (f(XIN) = 20MHz, 1/2 prescaler, without software wait) Memory ROM 128K to 256K byte capacity RAM 5K to 10K byte I/O ports P0 to P10 (except P85) 8 bit x 10, 7 bit x 1 Input port P85 1 bit x 1 Multifunction TA0, TA1, TA2, TA3, TA4 16 bit x 5 timer TB0, TB1, TB2, TB3, TB4, TB5 16 bit x 6 Serial I/O UART0, UART1, UART2 (UART or clock synchronous) x 3 SI/O3 Clock synchronous A-D converter 10 bits x (8 + 8 + 8 + 2) inputs D-A converter 8 bits x 2 channels CRC calculation circuit CRC-CCITT DMAC 2 channels (trigger: 23 sources) CAN module 2 channels, 2.0B active Watchdog timer 15 bits x 1 (with prescaler) Interrupt 29 internal and 9 external sources, 4 software sources, 7 priority levels Clock generating circuit 2 built-in clock generation circuits (built-in feedback resistor, and external ceramic or quartz oscillator) Supply voltage 4.2 to 5.5V (f(XIN) = 16MHz, 1/1 prescaler, without software wait) 4.2 to 5.5V (f(XIN) = 20MHz, 1/2 prescaler, without software wait) Power consumption TBD(f(XIN)=16MHz,1/1prescaler,withoutsoftwarewait) TBD(f(XIN)=20MHz,1/2prescaler,withoutsoftwarewait) I/O I/O withstand voltage 5V characteristics Output current 5mA Operating ambient temperature –40 to 85oC Device configuration CMOS high performance silicon gate Package 100-pin plastic mold QFP |
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