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OPB702R Datasheet(PDF) 2 Page - OPTEK Technologies |
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OPB702R Datasheet(HTML) 2 Page - OPTEK Technologies |
2 / 4 page Type OPB702 Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS Input Diode VF Forward Voltage 1.8 V IF = 20 mA IR Reverse Current 100 µA VR = 2.0 V Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA, IF = 0, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V IE = 100 µA, IF = 0, Ee = 0 ICEO Collector-Emitter Leakage Current 100 nA VCE = 10 V, IF = 0, Ee = 0 Coupled IC(ON) On-State Collector Current 50 µA VCE = 5.0 V, IF = 40 mA, d = 0.150”(3.81 mm) (3)(4) VCE(SAT) Collector-Emitter Saturation Voltage 0.40 V IC = 250 µA, IF = 40 mA, d = 0.150”(3.81 mm) (3)(4) |
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