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LP38856 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LP38856 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 14 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Storage Temperature Range −65˚C to +150˚C Lead Temperature Soldering, 5 seconds 260˚C ESD Rating Human Body Model (Note 2) ±2kV Power Dissipation (Note 3) Internally Limited V IN Supply Voltage (Survival) −0.3V to +6.0V V BIAS Supply Voltage (Survival) −0.3V to +6.0V V EN Voltage (Survival) −0.3V to +6.0V V OUT Voltage (Survival) −0.3V to +6.0V I OUT Current (Survival) Internally Limited Junction Temperature −40˚C to +150˚C Operating Ratings(Note 1) V IN Supply Voltage (V OUT +VDO)toVBIAS V BIAS Supply Voltage 3.0V to 5.5V V EN Enable Input Voltage 0.0V to V BIAS I OUT 0 mA to 3.0A Junction Temperature Range(Note 3) −40˚C to +125˚C Electrical Characteristics Unless otherwise specified: V IN =VOUT(NOM) + 1V, VBIAS = 3.0V, IOUT =10mA, C IN =COUT = 10 µF, CBIAS = 1µF, VEN =VBIAS. Limits in standard type are for TJ = 25˚C only; limits in boldface type apply over the junction temperature (T J) range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, de- sign, or statistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for ref- erence purposes only. Symbol Parameter Conditions MIN TYP MAX Units V OUT Output Voltage Tolerance V OUT(NOM) +1V ≤ V IN ≤ V BIAS, 3.0V ≤ V BIAS ≤ 5.5V, 10 mA ≤ I OUT ≤ 3.0A -1.0 -3.0 0.0 +1.0 +3.0 % V OUT(NOM) +1V ≤ V IN ≤ V BIAS, 3.0V ≤ V BIAS ≤ 5.5V, 10 mA ≤ I OUT ≤ 3.0A, 0˚C ≤ T J ≤ 125˚C -2.0 0 +2.0 ∆V OUT/ ∆V IN Line Regulation, V IN (Note 4) V OUT(NOM) +1V ≤ V IN ≤ V BIAS - 0.04 - %/V ∆V OUT/ ∆V BIAS Line Regulation, V BIAS (Note 4) 3.0V ≤ V BIAS ≤ 5.5V - 0.10 - %/V ∆V OUT/ ∆I OUT Output Voltage Load Regulation (Note 5) 10 mA ≤ I OUT ≤ 3.0A - 0.2 - %/A V DO Dropout Voltage V IN −VOUT (Note 6) I OUT = 3.0A - 240 300 450 mV I GND(IN) Ground Pin Current Drawn from V IN Supply LP38856-0.8 10 mA ≤ I OUT ≤ 3.0A - 7.0 8.5 9.0 mA LP38856-1.2 10 mA ≤ I OUT ≤ 3.0A -11 12 15 V EN ≤ 0.5V - 1.0 10 300 µA I GND(BIAS) Ground Pin Current Drawn from V BIAS Supply 10 mA ≤ I OUT ≤ 3.0A - 3.0 3.8 4.5 mA V EN ≤ 0.5V - 100 170 200 µA UVLO Under-Voltage Lock-Out Threshold V BIAS rising until device is functional 2.20 2.00 2.45 2.70 2.90 V UVLO (HYS) Under-Voltage Lock-Out Hysteresis V BIAS falling from UVLO threshold until device is non-functional 60 50 150 300 350 mV I SC Output Short-Circuit Current V IN =VOUT(NOM) + 1V, V BIAS = 3.0V, VOUT = 0.0V - 6.2 - A www.national.com 3 |
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