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ECH8402 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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ECH8402 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page ECH8402 No.8148-1/4 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TA-100740 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. ECH8402 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 10 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2!0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance yfs VDS=10V, ID=5A 5.6 9.4 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=5A, VGS=10V 11 15 m Ω RDS(on)2 ID=2.5A, VGS=4V 23 32 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 1400 pF Output Capacitance Coss VDS=10V, f=1MHz 270 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 190 pF Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns Rise Time tr See specified Test Circuit. 82 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 96 ns Fall Time tf See specified Test Circuit. 53 ns Marking : KB Continued on next page. Ordering number : ENN8148 |
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