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M28W320CB100GB1T Datasheet(PDF) 7 Page - STMicroelectronics

Part # M28W320CB100GB1T
Description  32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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M28W320CT, M28W320CB
DEVICE OPERATIONS
Four control pins rule the hardware access to the
Flash memory: E, G, W, RP. The following opera-
tions can be performed using the appropriate bus
cycles: Read, Write the Command of an Instruc-
tion, Output Disable, Stand-by, Reset (see Table
5).
Read. Read operations are used to output the
contents of the Memory Array, the Electronic Sig-
nature, the Status Register and the CFI. Both Chip
Enable (E) and Output Enable (G) must be at VIL
in order to perform the read operation. The Chip
Enable input should be used to enable the device.
Output Enable should be used to gate data onto
the output independently of the device selection.
The data read depend on the previous command
written to the memory (see instructions RD, RSIG,
RSR, RCFI). Read Array is the default state of the
device when exiting reset or after power-up.
Write. Write operations are used to give Com-
mands to the memory or to latch Input Data to be
programmed. A write operation is initiated when
Chip Enable E and Write Enable W are at VIL with
Output Enable G at VIH. Commands, Input Data
and Addresses are latched on the rising edge of W
or E, whichever occur first.
Output Disable. The data outputs are high im-
pedance when the Output Enable G is at VIH.
Stand-by. Stand-by disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable E is at VIH and the device is in
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
G or Write Enable W inputs. If E switches to VIH
during program or erase operation, the device en-
ters in stand-by when finished.
Reset. During Reset mode all internal circuits are
switched off, the memory is deselected and the
outputs are put in high impedance. The memory is
in Reset mode when RP is at VIL. The power con-
sumption is reduced to the stand-by level, inde-
pendently from the Chip Enable E, Out-put Enable
G or Write Enable W inputs. If RP is pulled to VSS
during a Program or Erase, this operation is abort-
ed and the memory content is no longer valid as it
has been compromised by the aborted operation.
Table 5. User Bus Operations (1)
Note: 1. X = VIL or VIH,VPPH = 12V ± 5%.
Table 6. Read Electronic Signature (RSIG Instruction)
Operation
E
G
W
RP
WP
VPP
DQ0-DQ15
Read
VIL
VIL
VIH
VIH
X
Don’t Care
Data Output
Write
VIL
VIH
VIL
VIH
X
VDD or VPPH
Data Input
Output Disable
VIL
VIH
VIH
VIH
X
Don’t Care
Hi-Z
Stand-by
VIH
XX
VIH
X
Don’t Care
Hi-Z
Reset
X
X
X
VIL
X
Don’t Care
Hi-Z
Code
Device
E
G
W
A0
A1
A2-A7
A8-A11
A12-A20
DQ0-DQ7
DQ8-DQ15
Manufact.
Code
VIL
VIL
VIH
VIL
VIL
0
Don’t Care
Don’t Care
20h
00h
Device
Code
M28W320CT
VIL
VIL
VIH
VIH
VIL
0
Don’t Care
Don’t Care
BAh
88h
M28W320CB
VIL
VIL
VIH
VIH
VIL
0
Don’t Care
Don’t Care
BBh
88h


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