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M28W320CT70ZB6T Datasheet(PDF) 3 Page - STMicroelectronics |
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M28W320CT70ZB6T Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 42 page 3/42 M28W320CT, M28W320CB DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C are in the 1 state. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against pro- gramming and erase at Power UP. Blocks can be unprotected to make changes in the application and then reprotected. A parameter block ”Security Block” can be permanently protected against pro- gramming and erase in order to increase the data security. Each block can be programmed and erased over 100,000 cycles. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up the program phase at customer production line environment. An internal Command Interface (C.I.) decodes the instructions to access/modify the memory content. The Program/Erase Controller (P/E.C.) automati- cally executes the algorithms taking care of the timings necessary for program and erase opera- tions. Verification is performed too, unburdening the microcontroller, while the Status Register tracks the status of the operation. The following instructions are executed by the M28W320C: Read Array, Read Electronic Signa- ture, Read Status Register, Clear Status Register, Program, Double Word Program, Block Erase, Program/Erase Suspend, Program/Erase Re- sume, CFI Query, Block Protect, Block Lock, Block Unprotect, Protection Program. Organisation The M28W320C is organised as 2 Mbit by 16 bits. A0-A20 are the address lines; DQ0-DQ15 are the Data Input/Output. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs. The Program and Erase operations are managed automatically by the P/E.C. Block pro- tection against Program or Erase provides addi- tional data security. Memory Blocks The device features an asymmetrical blocked ar- chitecture. The M28W320C has an array of 71 blocks: 8 Parameter Blocks of 4 KWord and 63 Main Blocks of 32 KWord. M28W320CT has the Parameter Blocks at the top of the memory ad- dress space while the M28W320CB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Tables 3 and 4. All Blocks are protected at power up. Instruction are provided to protect, unprotect any block in the application. A second register locks the protection status while WP is low (see Block Protection De- scription). Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then re- sumed. Program can be suspended to read data in any other block and then resumed. The architecture includes a 128 bits Protection register that are divided into Two 64-bits segment. In the first one, starting from address 81h to 84h, is written a unique device number, while the sec- ond one, starting from 85h to 88h, is programma- ble by the user. The user programmable segment can be permanently protected programming the bit.1 of the Protection Lock Register (see protec- tion register and Security Block). The parameter block (# 0) is a security block. It can be permanent- ly protected by the user programming the bit.2 of the Protection Lock Register (see protection regis- ter and Security Block). Table 2. Absolute Maximum Ratings (1) Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. 2. Depends on range. Symbol Parameter Value Unit TA Ambient Operating Temperature (2) –40 to 85 °C TBIAS Temperature Under Bias –40 to 125 °C TSTG Storage Temperature –55 to 155 °C VIO Input or Output Voltage –0.6 to VDDQ+0.6 V VDD,VDDQ Supply Voltage –0.6 to 4.1 V VPP Program Voltage –0.6 to 13 V |
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