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PBSS302PD Datasheet(PDF) 7 Page - NXP Semiconductors

Part # PBSS302PD
Description  40 V PNP low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS302PD Datasheet(HTML) 7 Page - NXP Semiconductors

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9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
7 of 15
Philips Semiconductors
PBSS302PD
40 V PNP low VCEsat (BISS) transistor
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V; IE = 0 A
-
-
−0.1
µA
VCB = −30 V; IE = 0 A; Tj = 150 °C-
-
−50
µA
ICES
collector-emitter
cut-off current
VCE = −30 V; VBE = 0 V
-
-
−0.1
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
hFE
DC current gain
VCE = −2 V; IC = −0.5 A
200
-
-
VCE = −2 V; IC = −1 A
[1] 200
-
-
VCE = −2 V; IC = −2 A
[1] 175
-
-
VCE = −2 V; IC = −4 A
[1] 80
-
-
VCE = −2 V; IC = −6 A
[1] 30
-
-
VCEsat
collector-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
-
−46
−60
mV
IC = −1 A; IB = −50 mA
-
−70
−110
mV
IC = −2 A; IB = −200 mA
-
−120
−180
mV
IC = −4 A; IB = −400 mA
[1] -
−220
−300
mV
IC = −6 A; IB = −600 mA
[1] -
−320
−450
mV
RCEsat
collector-emitter
saturation resistance
IC = −6 A; IB = −600 mA
[1] -
5575m
VBEsat
base-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
-
−0.8
−0.85
V
IC = −1 A; IB = −50 mA
-
−0.84
−0.9
V
IC = −1 A; IB = −100 mA
[1] -
−0.84
−1V
IC = −4 A; IB = −400 mA
[1] -
−1.0
−1.1
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −2 A
-
−0.8
−1.0
V
td
delay time
VCC = −10 V; IC = −2 A;
IBon = −0.1 A; IBoff = 0.1 A
-12
-
ns
tr
rise time
-
43
-
ns
ton
turn-on time
-
55
-
ns
ts
storage time
-
241
-
ns
tf
fall time
-
80
-
ns
toff
turn-off time
-
321
-
ns
fT
transition frequency
VCE = −10 V; IC = −0.1 A;
f = 100 MHz
-
110
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f=1MHz
-50
-
pF


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