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H5N5001FM Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N5001FM Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 10 page H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance : R DS(on) =1.1Ω typ. • Low leakage current : I DSS =1µA max (at VDS = 500 V) • High speed switching : tf = 15ns typ (at V GS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge : Qg = 15nC typ (at V DD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings Outline 1 2 3 TO–220FM 1. Gate 2. Drain 3. Source D G S |
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