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MRF6S21060NBR1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF6S21060NBR1 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 18 page 2 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1.5 2.2 2.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc) VGS(Q) 2 2.8 4 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — 0.3 — Vdc Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13.5 15.5 16.5 dB Drain Efficiency ηD 24.5 26 — % Intermodulation Distortion IM3 — -37 -35 dBc Adjacent Channel Power Ratio ACPR — -40 -38 dBc Input Return Loss IRL — -14 -10 dB 1. Part is internally matched both on input and output. |
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