RTE002P02

Transistors

2/2

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

∗Pulsed

−±10

−20

−−

−−

−1

−0.7

−−2.0

V

−

1.0

1.5

−

1.1

1.6

Ω

Ω

Ω

−

2.0

3.0

0.2

−−

−

50

−

pF

−10V

−

5

5

−

pF

−

9

−

pF

f=1MHz

−

6

−

ns

−

35

−

ns

−

45

−

ns

−−

ns

−15V

−0.15A

−4.5V

Ω

Ω

Body diode characteristics (Source-drain) (Ta=25

°C)

−−

−1.2

V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions