Philips Semiconductors

Product data

AU5790

Single wire CAN transceiver

2001 May 18

6

ABSOLUTE MAXIMUM RATINGS

According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to

pin 8 (GND); positive currents flow into the IC, unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VBAT

Supply voltage

Steady state

–0.3

+27

V

VBATld

Short-term supply voltage

Load dump; ISO7637/1 test pulse 5

(SAE J1113, test pulse 5), T < 1s

+40

V

VBATtr2

Transient supply voltage

ISO 7637/1 test pulse 2 (SAE J1113,

test pulse 2), with series diode and

bypass cap of 100 nF between BAT and

GND pins, Note 2.

+100

V

VBATtr3

Transient supply voltage

ISO 7637/1 pulses 3a and 3b

(SAE J1113 test pulse 3a and 3b),

Note 2.

–150

+100

V

VCANH_1

CANH voltage

–10

+18

V

CANH voltage

–16

+18

V

VCANHtr1

Transient bus voltage

ISO 7637/1 test pulse 1, Notes 1 and 2

–100

V

VCANHtr2

Transient bus voltage

ISO 7637/1 test pulse 2, Notes 1 and 2

+100

V

VCANHtr3

Transient bus voltage

ISO 7637/1 test pulses 3a, 3b,

Notes 1 and 2

–150

+100

V

Pin RTH voltage

via a 2 k

Ω series resistor

–10

+18

V

Pin RTH voltage

via a 2 k

Ω series resistor

–16

+18

V

VI

DC voltage on pins TxD, EN, RxD, NSTB

–0.3

+7

V

ESDBAHB

ESD capability of pin BAT

Direct contact discharge,

R=1.5 k

Ω, C=100 pF

–8

+8

kV

ESD capability of pin CANH

Direct contact discharge,

R=1.5 k

Ω, C=100 pF

–8

+8

kV

ESD capability of pin RTH

Direct contact discharge,

R=1.5 k

Ω + 3 kΩ, C=100 pF

–8

+8

kV

ESD capability of pins TxD, NSTB, EN, RxD, and

RTH

Direct contact discharge,

R=1.5 k

Ω , C=100 pF

–2

+2

kV

RTH

2

k

Ω

Tamb

Operating ambient temperature

–40

+125

Tstg

Storage temperature

–40

+150

°C

Tvj

Junction temperature

–40

+150

°C

NOTES:

1. Test pulses are coupled to CANH through a series capacitance of 1 nF.