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BA484 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BA484 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 5 page 1996 Apr 17 3 Philips Semiconductors Product specification Band-switching diodes BA482; BA483; BA484 THERMAL CHARACTERISTICS Note 1. Device mounted on a FR4 printed-circuit board without metallization pad. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W GRAPHICAL DATA (1) Tj =75 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.2 Forward current as a function of forward voltage. handbook, halfpage 0 1.5 100 0 50 MBG304 0.5 1 I F (mA) V (V) F (1) (2) (3) VR =20V. Solid line: maximum values. Dotted line: typical values. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 10 5 10 4 10 3 10 2 10 1 150 0 MBG303 50 100 Tj ( C) o I R (nA) |
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