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BAP50-04 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAP50-04 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 10 3 Philips Semiconductors Preliminary specification General purpose PIN diode BAP50-04 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF =50mA − 0.95 1.1 V VR reverse voltage IR =10 µA50 −− V IR reverse current VR =50V −− 100 nA Cd diode capacitance VR = 0; f = 1 MHz − 0.45 − pF VR = 1 V; f = 1 MHz − 0.35 0.6 pF VR = 5 V; f = 1 MHz − 0.3 0.5 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 − 25 40 Ω IF = 1 mA; f = 100 MHz; note 1 − 14 25 Ω IF = 10 mA; f = 100 MHz; note 1 − 35 Ω SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 220 K/W |
Similar Part No. - BAP50-04 |
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Similar Description - BAP50-04 |
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