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CM1210-01ST Datasheet(PDF) 4 Page - California Micro Devices Corp |
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CM1210-01ST Datasheet(HTML) 4 Page - California Micro Devices Corp |
4 / 13 page © 2004 California Micro Devices Corp. All rights reserved. 4 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: 408.263.3214 L Fax: 408.263.7846 L www.calmicro.com 01/14/04 CM1210 Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted. Note 2: These parameters guaranteed by design and characterization. Note 3: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22µF ceramic capacitor (see Application Information for more details). Note 4: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded. Note 5: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded. ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT S IP Supply Current (VP-VN)=3.3V 8.0 µA VF Diode Forward Voltage Top Diode Bottom Diode IF = 8mA 0.60 0.60 0.80 0.80 0.95 0.95 V V ILEAK Channel Leakage Current +0.1 +1.0 µA CIN Channel Input Capacitance At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V; Note 2 applies 1.0 1.3 pF VESD ESD Protection Peak Discharge Voltage at any channel input, in system a) Contact discharge per IEC 61000-4-2 standard Notes 2,3 and 5; TA=25°C +6kV VCL Channel Clamp Voltage CM1210-01ST, CM1210-01SC, CM1210-02ST, CM1210-02SC Positive Transients Negative Transients At 8kV ESD HBM; Notes 2 & 4 VP + 10.0 VN - 10.0 V V Channel Clamp Voltage CM1210-04ST, CM1210-08MS Positive Transients Negative Transients At 8kV ESD HBM; Notes 2 & 4 VP + 13.0 VN - 13.0 V V |
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