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BAQ800 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BAQ800
Description  AM PIN diode
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAQ800 Datasheet(HTML) 2 Page - NXP Semiconductors

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1997 Aug 26
2
Philips Semiconductors
Product specification
AM PIN diode
BAQ800
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammopack.
APPLICATIONS
• RF attenuator with low distortion for
frequencies above 100 kHz.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and stress free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF(AV)
average forward current
Ttp =25 °C; lead length = 10 mm;
see Fig.2
1.25
A
Tamb =60 °C; printed-circuit board
mounting (see Fig.17); see Fig.3
600
mA
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+150
°C


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