Electronic Components Datasheet Search |
|
BAS221 Datasheet(PDF) 5 Page - NXP Semiconductors |
|
BAS221 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 1999 May 07 5 Philips Semiconductors Product specification General purpose diode BAS221 Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 102 10 200 0 MBG381 100 Tj ( oC) IR ( µA) 1 10 2 10 1 (1) (2) (1) VR =VRmax; maximum values. (2) VR =VRmax; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 04 8 6 2 1.0 0.8 0.2 0.6 0.4 MBG447 VR (V) Cd (pF) Fig.7 Reverse recovery time and waveforms. (1) IR = 3 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance). handbook, full pagewidth t rr (1) I F t output signal t r t t p 10% 90% VR input signal V = V I x R RF S R = 50 S Ω IF D.U.T. R = 50 i Ω SAMPLING OSCILLOSCOPE MGA881 |
Similar Part No. - BAS221 |
|
Similar Description - BAS221 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |